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1

Modeling of electron mobility in gated silicon nanowires at room temperature: Surface roughness scattering, dielectric screening, and band nonparabolicity

Jin, Seonghoon, Fischetti, Massimo V., Tang, Ting-wei

Journal:

Journal of Applied Physics

Year:

2007

Language:

english

File:

PDF, 609 KB

english, 2007

2

Monte carlo analysis of electron transport in small semiconductor devices including band-structure and space-charge effects

Fischetti, Massimo, Laux, Steven

Journal:

Physical Review B

Year:

1988

Language:

english

File:

PDF, 1.28 MB

english, 1988

3

interface based on hot-hole injection from the anode

Fischetti, Massimo V.

Journal:

Physical Review B

Year:

1985

Language:

english

File:

PDF, 745 KB

english, 1985

4

Theoretical Study of the Gate Leakage Current in Sub-10-nm Field-Effect Transistors

Fischetti, Massimo V., Fu, Bo, Vandenberghe, William G.

Journal:

IEEE Transactions on Electron Devices

Year:

2013

Language:

english

File:

PDF, 1.11 MB

english, 2013

5

[Graduate Texts in Physics] Advanced Physics of Electron Transport in Semiconductors and Nanostructures ||

Fischetti, Massimo V., Vandenberghe, William G.

Year:

2016

Language:

english

File:

PDF, 12.70 MB

english, 2016

6

Thickness and temperature dependence of the leakage current in hafnium-based Si SOI MOSFETs

Jiseok Kim, Siddarth A. Krishnan, Sudarshan Narayanan, Michael P. Chudzik, Massimo V. Fischetti

Journal:

Microelectronics Reliability

Year:

2012

Language:

english

File:

PDF, 806 KB

english, 2012

7

Imperfect two-dimensional topological insulator field-effect transistors

Vandenberghe, William G., Fischetti, Massimo V.

Journal:

Nature Communications

Year:

2017

Language:

english

File:

PDF, 644 KB

english, 2017

8

Monte Carlo Solution to the Problem of High-Field Electron Heating in Si

Fischetti, Massimo V.

Journal:

Physical Review Letters

Year:

1984

Language:

english

File:

PDF, 186 KB

english, 1984

9

Master-Equation Study of Quantum Transport in Realistic Semiconductor Devices Including Electron-Phonon and Surface-Roughness Scattering

Vyas, Pratik B., Van de Put, Maarten L., Fischetti, Massimo V.

Journal:

Physical Review Applied

Year:

2020

Language:

english

File:

PDF, 12.90 MB

english, 2020

10

[IEEE 2011 International Semiconductor Device Research Symposium (ISDRS) - College Park, MD, USA (2011.12.7-2011.12.9)] 2011 International Semiconductor Device Research Symposium (ISDRS) - One-flux theory of saturated drain current in nanoscale transistors

Tang, Ting-wei, Fischetti, Massimo V., Jin, Seonghoon, Sano, Nobuyuki

Year:

2011

Language:

english

File:

PDF, 357 KB

english, 2011

11

The importance of the anode field in controlling the generation rate of the donor states at the Si–SiO2 interface

Fischetti, Massimo V.

Journal:

Journal of Applied Physics

Year:

1984

Language:

english

File:

PDF, 477 KB

english, 1984

12

[IEEE 2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD) - Vienna, Austria (2020.9.13-2020.9.18)] 2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD) - Channel Length Scaling Limit for LDMOS Field-Effect Transistors: Semi-classical and Quantum Analysis

Saadat, Ali, Vyas, Pratik B., Put, Maarten L. Van de, Fischetti, Massimo V., Edwards, Hal, Vandenberghe, William G.

Year:

2020

File:

PDF, 1.30 MB

2020

13

Calculation of room temperature conductivity and mobility in tin-based topological insulator nanoribbons

Vandenberghe, William G., Fischetti, Massimo V.

Journal:

Journal of Applied Physics

Year:

2014

Language:

english

File:

PDF, 1.10 MB

english, 2014

14

Understanding the Average Electron-Hole-Pair Creation-Energy in Silicon and Germanium based on Full-band Monte Carlo Simulations

Fang, Jingtian, Reaz, Mahmud, Weeden-Wright, Stephanie L., Schrimpf, Ronald D., Reed, Robert A., Weller, Robert A., Fischetti, Massimo V., Pantelides, Sokrates T.

Journal:

IEEE Transactions on Nuclear Science

Year:

2018

Language:

english

File:

PDF, 5.90 MB

english, 2018

15

[Graduate Texts in Physics] Advanced Physics of Electron Transport in Semiconductors and Nanostructures || Scattering with Ionized Impurities

Fischetti, Massimo V., Vandenberghe, William G.

Year:

2016

Language:

english

File:

PDF, 163 KB

english, 2016

16

[Graduate Texts in Physics] Advanced Physics of Electron Transport in Semiconductors and Nanostructures || Dielectric Properties of Semiconductors

Fischetti, Massimo V., Vandenberghe, William G.

Year:

2016

Language:

english

File:

PDF, 488 KB

english, 2016

17

Erratum: “Theory of electron transport in small semiconductor devices using the Pauli master equation” [J. Appl. Phys. 83, 270 (1998)]

Fischetti, Massimo V.

Journal:

Journal of Applied Physics

Year:

1998

Language:

english

File:

PDF, 310 KB

english, 1998

18

[Graduate Texts in Physics] Advanced Physics of Electron Transport in Semiconductors and Nanostructures || Overview of Quantum-Transport Formalisms

Fischetti, Massimo V., Vandenberghe, William G.

Year:

2016

Language:

english

File:

PDF, 249 KB

english, 2016

19

Figure of merit for and identification of sub-60 mV/decade devices

Vandenberghe, William G., Verhulst, Anne S., Sorée, Bart, Magnus, Wim, Groeseneken, Guido, Smets, Quentin, Heyns, Marc, Fischetti, Massimo V.

Journal:

Applied Physics Letters

Year:

2013

Language:

english

File:

PDF, 468 KB

english, 2013

20

[Graduate Texts in Physics] Advanced Physics of Electron Transport in Semiconductors and Nanostructures || * Electronic Structure of Low-Dimensionality Systems

Fischetti, Massimo V., Vandenberghe, William G.

Year:

2016

Language:

english

File:

PDF, 5.98 MB

english, 2016

21

Electronic band structure calculations for biaxially strained Si, Ge, and IIIâV semiconductors

Kim, Jiseok, Fischetti, Massimo V.

Journal:

Journal of Applied Physics

Year:

2010

Language:

english

File:

PDF, 1.59 MB

english, 2010

22

Pseudopotential-based electron quantum transport: Theoretical formulation and application to nanometer-scale silicon nanowire transistors

Fang, Jingtian, Vandenberghe, William G., Fu, Bo, Fischetti, Massimo V.

Journal:

Journal of Applied Physics

Year:

2016

Language:

english

File:

PDF, 980 KB

english, 2016

23

Charged impurity scattering in top-gated graphene nanostructures

Ong, Zhun-Yong, Fischetti, Massimo V.

Journal:

Physical Review B

Year:

2012

Language:

english

File:

PDF, 296 KB

english, 2012

24

Pseudopotential-based studies of electron transport in graphene and graphene nanoribbons

Fischetti, Massimo V, Kim, Jiseok, Narayanan, Sudarshan, Ong, Zhun-Yong, Sachs, Catherine, Ferry, David K, Aboud, Shela J

Journal:

Journal of Physics Condensed Matter

Year:

2013

Language:

english

File:

PDF, 5.83 MB

english, 2013

25

Full-band simulation of indirect phonon assisted tunneling in a silicon tunnel diode with delta-doped contacts

Rivas, Cristian, Lake, Roger, Klimeck, Gerhard, Frensley, William R., Fischetti, Massimo V., Thompson, Phillip E., Rommel, Sean L., Berger, Paul R.

Journal:

Applied Physics Letters

Year:

2001

Language:

english

File:

PDF, 343 KB

english, 2001

26

[IEEE 13th International Workshop on Computational Electronics (IWCE) - Beijing, China (2009.05.27-2009.05.29)] 2009 13th International Workshop on Computational Electronics - Anatomy of Carrier Backscattering in Silicon Nanowire Transistors

Jin, Seonghoon, Tang, Ting-wei, Fischetti, Massimo V.

Year:

2009

Language:

english

File:

PDF, 333 KB

english, 2009

27

ECS Transactions [ECS 217th ECS Meeting - Vancouver, Canada (April 25 - April 30, 2010)] - (Invited) Scaling FETs to 10 nm: Coulomb Effects, Source Starvation, and Virtual Source

Fischetti, Massimo V., Jin, Seonghoon, Tang, Ting-wei, Asbeck, Peter, Taur, Yuan, Laux, Steven, Sano, Nobuyuki, Rodwell, Mark

Year:

2010

Language:

english

File:

PDF, 1.38 MB

english, 2010

28

Real-time ab initio simulation of inelastic electron scattering using the exact, density functional, and alternative approaches

Lee, Yeonghun, Yao, Xiaolong, Fischetti, Massimo V., Cho, Kyeongjae

Journal:

Physical Chemistry Chemical Physics

Year:

2020

File:

PDF, 2.75 MB

2020

29

Response to “Comment on ‘Theoretical analysis of high-field transport in graphene on a substrate’” [J. Appl. Phys. 116, 236101 (2014)]

Serov, Andrey Y., Ong, Zhun-Yong, Fischetti, Massimo V., Pop, Eric

Journal:

Journal of Applied Physics

Year:

2014

Language:

english

File:

PDF, 296 KB

english, 2014

30

Top oxide thickness dependence of remote phonon and charged impurity scattering in top-gated graphene

Ong, Zhun-Yong, Fischetti, Massimo V.

Journal:

Applied Physics Letters

Year:

2013

Language:

english

File:

PDF, 729 KB

english, 2013

31

Theoretical studies of electronic transport in monolayer and bilayer phosphorene: A critical overview

Gaddemane, Gautam, Vandenberghe, William G., Van de Put, Maarten L., Chen, Shanmeng, Tiwari, Sabyasachi, Chen, Edward, Fischetti, Massimo V.

Journal:

Physical Review B

Year:

2018

Language:

english

File:

PDF, 7.15 MB

english, 2018

32

[IEEE 2019 Device Research Conference (DRC) - Ann Arbor, MI, USA (2019.6.23-2019.6.26)] 2019 Device Research Conference (DRC) - First-principles Study of the Electron and Hole Mobility in Silicane

Khatami, Mohammad Mahdi, Gaddemane, Gautam, Van de Put, Maarten L., Fischetti, Massimo V., Moravvej-Farshi, Mohammad Kazem, Pourfath, Mahdi, Vandenberghe, William G.

Year:

2019

File:

PDF, 434 KB

2019

33

[IEEE 2008 IEEE International Electron Devices Meeting (IEDM) - San Francisco, CA, USA (2008.12.15-2008.12.17)] 2008 IEEE International Electron Devices Meeting - Session 36: Modeling and simulation enhanced mobility and III-V devices

Fischetti, Massimo, Oldiges, Phil

Year:

2008

Language:

english

File:

PDF, 100 KB

english, 2008

34

[IEEE 2018 76th Device Research Conference (DRC) - Santa Barbara, CA, USA (2018.6.24-2018.6.27)] 2018 76th Device Research Conference (DRC) - Modeling of electron transport in nanoribbon devices using Bloch waves

Laturia, Akash A., Van de Put, Maarten L., Fischetti, Massimo V., Vandenberghe, William G.

Year:

2018

Language:

english

File:

PDF, 3.22 MB

english, 2018

35

Hot-carrier charge trapping and trap generation in HfO[sub 2] and Al[sub 2]O[sub 3] field-effect transistors

Kumar, Arvind, Fischetti, Massimo V., Ning, Tak H., Gusev, Evgeni

Journal:

Journal of Applied Physics

Year:

2003

Language:

english

File:

PDF, 486 KB

english, 2003

36

Quantum Monte Carlo Simulation of High-Field Electron Transport: An Application to Silicon Dioxide

Fischetti, Massimo V., DiMaria, D. J.

Journal:

Physical Review Letters

Year:

1985

Language:

english

File:

PDF, 863 KB

english, 1985

37

Remote Phonon Scattering in Si and Ge with SiO 2 and HfO 2 Insulators: Does the Electron Mobility Determine Short Channel Performance?

O'Regan, Terrance, Fischetti, Massimo

Journal:

Japanese Journal of Applied Physics

Year:

2007

Language:

english

File:

PDF, 188 KB

english, 2007

38

Determining bound states in a semiconductor device with contacts using a nonlinear eigenvalue solver

William G. Vandenberghe,Massimo V. Fischetti…

Journal:

Journal of Computational Electronics

Year:

2014

Language:

english

File:

PDF, 588 KB

english, 2014

39

[IEEE 2018 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) - Austin, TX, USA (2018.9.24-2018.9.26)] 2018 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) - Simulation of Quantum Current in Double Gate MOSFETs: Vortices in Electron Transport

Vyas, Pratik B., Van de Put, Maarten L., Fischetti, Massimo V.

Year:

2018

Language:

english

File:

PDF, 1.14 MB

english, 2018

40

Transistors Based on First-Principles Calculations and Boltzmann-Equation Monte Carlo Simulations

Fang, Jingtian, Fischetti, Massimo V., Schrimpf, Ronald D., Reed, Robert A., Bellotti, Enrico, Pantelides, Sokrates T.

Journal:

Physical Review Applied

Year:

2019

Language:

english

File:

PDF, 1.97 MB

english, 2019

41

An empirical pseudopotential approach to surface and line-edge roughness scattering in nanostructures: Application to Si thin films and nanowires and to graphene nanoribbons

Fischetti, Massimo V., Narayanan, Sudarshan

Journal:

Journal of Applied Physics

Year:

2011

Language:

english

File:

PDF, 2.58 MB

english, 2011

42

[IEEE 2012 International Silicon-Germanium Technology and Device Meeting (ISTDM) - Berkeley, CA, USA (2012.06.4-2012.06.6)] 2012 International Silicon-Germanium Technology and Device Meeting (ISTDM) - Post-Si-CMOS Devices - Scaling FETs to (Beyond?) 10 nm: From Semiclassical to Quantum Models

Fischetti, Massimo V.

Year:

2012

Language:

english

File:

PDF, 316 KB

english, 2012

43

[IEEE 2012 15th International Workshop on Computational Electronics (IWCE) - Madison, WI, USA (2012.05.22-2012.05.25)] 2012 15th International Workshop on Computational Electronics - Electronic and transport properties of armchair and zigzag sp3-hybridized silicane nanoribbons

Kim, Jiseok, Fischetti, Massimo V., Aboud, Shela

Year:

2012

Language:

english

File:

PDF, 429 KB

english, 2012

44

[IEEE 2015 International Workshop on Computational Electronics (IWCE) - West Lafayette, IN, USA (2015.9.2-2015.9.4)] 2015 International Workshop on Computational Electronics (IWCE) - Progress on quantum transport simulation using empirical pseudopotentials

Fang, Jingtian, Vandenberghe, William, Fischetti, Massimo

Year:

2015

Language:

english

File:

PDF, 1.38 MB

english, 2015

45

[IEEE 2018 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) - Austin, TX, USA (2018.9.24-2018.9.26)] 2018 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) - Efficient Modeling of Electron Transport with Plane Waves

Van de Put, Maarten L., Laturia, Akash A., Fischetti, Massimo V., Vandenberghe, William G.

Year:

2018

Language:

english

File:

PDF, 212 KB

english, 2018

46

The myosin motor in muscle generates a smaller and slower working stroke at higher load

Reconditi, Massimo, Linari, Marco, Lucii, Leonardo, Stewart, Alex, Sun, Yin-Biao, Boesecke, Peter, Narayanan, Theyencheri, Fischetti, Robert F., Irving, Tom, Piazzesi, Gabriella

Journal:

Year:

2004

Language:

english

File:

PDF, 280 KB

english, 2004

47

[IEEE 2010 International Workshop on Computational Electronics (IWCE) - Pisa, Italy (2010.10.26-2010.10.29)] 2010 14th International Workshop on Computational Electronics - Model-comparison study of quasi-ballistic electron transport in nanoscale semiconductor devices

Tang, Ting-wei, Yoon, Il-o, Sano, Nobuyuki, Jin, Seonghoon, Fischetti, Massimo V., Park, Young June

Year:

2010

Language:

english

File:

PDF, 1.58 MB

english, 2010

48

[IEEE 2015 IEEE 15th International Conference on Nanotechnology (IEEE-NANO) - Rome, Italy (2015.7.27-2015.7.30)] 2015 IEEE 15th International Conference on Nanotechnology (IEEE-NANO) - Physics of electronic transport in low-dimensionality materials for future FETs

Fischetti, Massimo V., Vandenberghe, William G., Suarez Negreira, Ana, Ong, Zhun-Yong, Bo Fu,

Year:

2015

Language:

english

File:

PDF, 426 KB

english, 2015

49

Monte Carlo Study of Electronic Transport in Monolayer InSe

Gopalan, Sanjay, Gaddemane, Gautam, Van de Put, Maarten L., Fischetti, Massimo V.

Journal:

Year:

2019

Language:

english

File:

PDF, 1.73 MB

english, 2019

50

Limitations of abÂ initio methods to predict the electronic-transport properties of two-dimensional semiconductors: the computational example of 2H-phase transition metal dichalcogenides

Gaddemane, Gautam, Gopalan, Sanjay, Van de Put, Maarten L., Fischetti, Massimo V.

Journal:

Journal of Computational Electronics

Year:

2020

File:

PDF, 1.05 MB

2020

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